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  , li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. ww5906, ww5907, ww5980 thru ww6005 silicon power rectifier diode, 40amp features: ? high surge current capability ? high voltage available ? designed for a wide range of applications ? available in anode-to-case or cathode-to-case style ratings and characteristics: average forward current (tc = +140c max), if(av) maximum forward surge current, ifsm 50hz 60hz fusing current, i2t telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 40a 480a 500a 50hz 60hz ... fusing current, maximum reverse recovery voltage range, vrrm voltage ratings: ... 1150a2s ... 1050a2s 16000avs 50 to 1600v cathode to case 5980 5982 5986 5988 5990 5992 5994 5998 6002 5906 6004 anode to case 5981 5983 5987 5989 5991 5993 5995 5999 6003 5907 6005 vrrm-max repetitive peak reverse volt. (v) tj=-65to+150c 50 100 200 300 400 500 600 800 1000 1200 1600 vrsm-mbx non-repetitive peak reverse voltage (v) tp < 5ms tj = +25to+150c 100 200 300 450 500 600 720 960 1200 1400 1700 vr-max. direct reverse voltage (v) tj =-65" to +150c 50 100 200 300 400 500 600 800 1000 1200 1600 vr(sr) minimum avalanche voltage (v) tj = +25c - - - - 500 600 725 960 1150 1350 1700 lrm-max reverse current rated vrrm (ma) tj = +150c 15 15 15 15 15 9 9 9 9 9 9 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical specifications: parameter maximum average forward current maximum peak one-cycle non-repetitive surge current maximum i2t for fusing maximum i2t for individual device fusing maximum \yt maximum peak forward voltage maximum value of threshold voltage maximum value of forward slope resistance symbol !p (av) !fsm i2t ivt vfm vm (to) rt test conditions 180 sinusoidal condition, tc = +140c max half cycle 50hz sine wave or 8ms rectangular pulse half cycle 60hz sine wave at 5ms rectangular pulse half cycle 50hz sine wave or 6ms rectangular pulse half cycle 60hz sine wave at 3ms rectangular pulse t= 10ms t = 8.3ms t= 10ms t = 8.3ms following any rated load condition and with rated vrrm applied following any rated load condition and with vrrm applied following surge = 0 with rated vrrm ap- plied following surge with vrrm = 0 fol- lowing surge t = 0.1 to 10ms, vrrm = 0 following surge if (av) = 4qa (125 peak), tj = +25c tj = +100c tj = +100c rating 40 480 500 570 586 1150 1050 1600 1450 16000 1.30 0.69 3.79 unit a a a a a a2s a2s a2s a2s avt v v mo thermal-mechanical specifications: parameter maximum operation junction temperature maximum storage temperature maximum internal thermal resistance junction-to-case thermal resistance, case-to-sink mounting torque approximate weight symbol tj tstg rthjc rthcs t wt test conditions dc operation mounting surface flat, smooth and greased non-lubricated threads rating -65to + 190 -65to+ 190 1.00 0.25 2.3-3.4 (20 - 30) 17(0.8) unit c c k/w k/w m?n (in.lb) 9(oz)
t 1.288 (32.71) max .450 (11.4) max a f .453 (11.5) max 1 .687 (17.4) max .667 (16.9) dia max .375 (9.55) max -.140 (3.65) dia max .200 (5.08) max 1/4-28 unf-2a


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